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Memory and Computing Materials and Devices

NEST researchers are developing a range of exciting next-generation materials and devices for memory (data storage) and computing applications. We work on novel magnetic materials and devices for data storage (future magnetic hard disk systems) and data processing (spintronic logic), as well as pioneering the use of chalcogenide phase-change materials for unconventional (non-von Neumann) computing. We are also developing a range of quantum materials and devices for quantum computing applications

NEST researchers are pioneers in the development of next-generation non-volatile memory devices based on chalcogenide phase-change materials. We are developing both electrical memories (for applications such as SSD replacement and so-called storage-class memories), as well as integrated photonic memories for use in photonic integrated circuits and processors.

Conventional digital electronic computing is limited by the so-called von-Neumann bottleneck arising from the physical separation of processing and memory functions. In NEST we are developing new neuromorphic and arithmetic approaches to computing that avoid this bottleneck, and also work in the photonic domain to exploit the speed and energy advantages of photonics over electronics.

NEST researchers are actively developing new materials and recording approaches for next-generation magnetic hard disk drives, including heat-assisted recording (HAMR) and microwave-assisted recording.

We are exploiting the fascinating spin properties of magnetic materials to develop new types of devices and applications, including magnetic nanomotors, actuators and sensors. We are also working on the development of novel single photon light sources for quantum computing applications.

People

NEST academics working in the area of memory and computing materials and devices include the following: